3D TACD Modelling of Multi-channel Tri-gate Normally-off AlGaN/GaN MOSHEMTs

This paper presents a comprehensive TCAD (Technology Computer-Aided Design) modelling study focused on multi-channel Gallium Nitride (GaN) devices, with a particular emphasis on tri-gate structures. Recently GaN based devices have gained considerable momentum in the power electronics applications. Multi-channel devices utilize AlGaN/GaN heterostructures placed on top of each other to provide parallel conduction paths formed of individual two-dimensional-electron-gas (2DEG) layers. Such devices have considerably lower on-state resistance when compared to conventional GaN devices. Specifically, a 5-channel structure can achieve a net 2DEG density of $2.5\times 10^{13}cm^{-2}$. TCAD simulations provide valuable insights into device behavior, allowing for optimization of performance and design parameters. To achieve normally-off operation a tri-gate structure is employed in the third dimension. Given the challenging architecture of this device, complex 3D simulations are employed, and the outcomes are reported in this paper.