A Buried Heterostructure Laser Diode Based on High Thermal Conductivity Silicon Carbide Substrate

A buried-heterostructure laser diode based on a silicon carbide substrate has been proposed and demonstrated. Using quantum well intermixing and wafer bonding technique, an InGaAsP buried-heterostructure waveguide was formed and bonded on SiC substrate, leading to high optical power of CW >4 mW, low transmission loss, and good cooling performance.