Electrical Characterization of Ω-Gate Nanowire MOSFETs Down to Cryogenic Temperatures

This work presents the electrical characterization of Ω-gate SOI nanowire MOSFETs in the temperature range from 82 K to 330 K. Devices with different fin widths and channel lengths are compared. The comparison is performed using experimental data looking for some of the fundamental electrical parameters such as threshold voltage, inverse subthreshold slope, and carrier mobility over the temperature. For short-channel devices with L=40 nm an analysis of the mobility degradation coefficients over the temperature is performed.