Mobility Extraction Methods in AlGaN/GaN HEMTs

This work deals with the comparison of the results of different methods for the extraction of charge mobility on AlGaN/GaN HEMT devices. They are, field effect mobility (μ
FE
), effective mobility (μ
eff
) and low field mobility (μ
0
), varying the gate length (L
g
) and channel width (W), temperature (T) and gate voltage (V
g
). In addition, the available data allowed the examination of figures of merit for the drain current (I
d
), output conductance (g
d
) and transconductance (g
m
), as well as the analysis of the behavior of the series resistance (R
SD
), threshold voltage (V
T
), and subthreshold slope (S). In this study, it was found that HEMTs have higher mobility for higher W, W/L
g
and V
g
, and for lower T in a range between 298K to 373K.