Continuous Carrier-Envelope Phase Control for Terahertz-Driven Scanning Probe Microscopy of 2D Semiconductors

Defects in 2D semiconductors present an exciting materials platform to engineer atomic quantum states in a robust, yet tunable solid-state system. In this contribution, we will present our efforts to probe the dynamics of point defects in transition metal dichalcogenides (TMDs) at picosecond time and atomic spatial resolution by means of an ultrafast THz pulse driven scanning tunneling microscope (THz-STM). We demonstrate an efficient, continuous carrier-envelope phase control, which enables state-selective tunneling into specific defect orbitals in our multi-MHz repetition rate system.