THz-near IR hyper-Raman surface spectroscopy of silicon wafer surface

We recorded the hyper-Raman spectra resulting from the interaction of picosecond visible and ultrashort THz pulses at the surface of (111) silicon wafer. It reveals the signature of the Si lattice phonon and SiO
2
mode centered at $\sim 610$ cm
^-1
and $\sim 1100$ cm
¹
, respectively. This technique also evidences the growing of the SiO
2
layer at the surface of the silicon wafer exposed to ambient air.