THz detection optimization of antenna coupled AlGaN/GaN high electron mobility transistors

In this work we study the THz antenna coupled AlGaN/GaN high electron mobility transistors (HEMTs) in different configurations of the EdgeFET and FinFET designs to develop a sensitive TeraFET detector. The dependence of sensitivity on channel length is found experimentally studying two types of radiation coupling via ohmic and capacitive connection of THz antennas.