Hysteresis Amplifier Model to Eliminate Multi-switching on IGBT Work

The occurrence of multi-switching on an isolated gate bipolar transistor (IGBT) function can cause significant power dissipation and disrupt the power network. To overcome this problem, this paper designs a hysteresis amplifier model to reduce multi-switching in IGBTs. This software is used to simulate and analyze the performance of the hysteresis model amplifier. The hysteresis amplifier design is used to induce a hysteresis effect on the IGBT control signal. This effect produces an output frequency of 50 Hz with a 50% duty cycle. The working mechanism of this design includes the formation of a hysteresis window on the IGBT control signal, +2.00 V to +2.52 V. If the design result of the control signal is at least +2.50 V to +2.48 V, the IGBT enters the active state when Vout1 reaches +3.51 V. The design results in the control signal reaching a maximum value of +2.50 V to +2.51 V. The IGBT transitions to the active state when the voltage at Vout2 reaches a threshold of +3.51 V. The automatic implementation of the hysteresis window effectively reduces the occurrence of multi-switching by ensuring that a switch event occurs when the control signal is within the specified hysteresis window range. The current transformer detects changes in current through the variable resistor when Vin +2.00V to Vin +2.52 V. By understanding the characteristics and implementation of the model, it is possible to formulate intelligent control strategies aimed at increasing the efficiency and stability of system power through the use of IGBT.