An IGBT Device Health Status Assessment Method Considering the Influence of Operating Conditions

The Insulated Gate Bipolar Transistor (IGBT) is a critical component of power electronic equipment, and its health is of utmost importance to ensure the reliability and stability of the entire system. This paper proposes a method for assessing the health status of IGBT device under various operating conditions. Firstly, a finite element model of the IGBT device is established to analyze the influence of solder layer void and bond line detachment on the saturation voltage of the device. Secondly, the device parameters are simulated under different working conditions, and an adaptive neural network algorithm is used to establish the IGBT equipment health state evaluation model. Finally, the results of the model are analyzed, and the prediction results under random conditions are compared with the simulation results. The results show that this method effectively evaluates the health status of IGBT devices.