Gallium Nitride/ Boron Nitride/ Aluminum Gallium Nitride E-Mode High Electron Mobility Transistor Modeling

This paper presents numerical modeling of gallium nitride/boron nitride/aluminum gallium nitide E-Mode High Electron Mobility Transistors. Breakdown voltages of 4kV are calculated for technologically feasible AlGaN compositions. Various trade-offs between on-state current and other device parameters are calculated. Longitudinal optical phonon effect on on-state currents is numerically studied. The effect of material composition on current-voltage parameters is systematically evaluated.