Performance Analysis of Triple Material Double Gate MOSFET for Biosensing Application

In this paper a comparative study is shown between different biomolecules as a dielectric in a Triple Material Double Gate MOSFET. It utilises a numerical TCAD device simulator to analyse the effects of biomolecules as a dielectric on the different performance parameters of TMDG MOSFETs. Due to the non-linear behaviour of the devices, linearity testing and RF performance are significant problems that are encountered in analogue and RF circuit applications. Inthis study, the investigation of various figures of merits for linearity and RF/Analog performance metrics such gm (Transconductance), fT(Cut off frequency), and 1- dB compression has been reported. The drain current sensitivity (SI) is also major key factor which has been analysed and has been presented in this paper. Theoutcome demonstrates that the Triple Material Double Gate MOSFET (TMDGMOS) is extremely competitive for creation of biosensors.