Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip

In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.