Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/µm2

For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at the V band and achieve a high power density of $2.3\mathrm{~mW}/\mu\mathrm{m}^{2}$ at 50GHz. The simulated and measured class E is analysed and compared with an analytical HBT switching model. A single-stage, single-finger of $0.85\times 6\mu\mathrm{m}^{2}$ (emitter area) class E power amplifier is designed to reach this high power density with a PAE of 28.3%.