A 12 GS/s RF-Sampler Employing Inductive Peaking in 22 nm FD-SOI CMOS

This paper presents a 12 GS/s RF-sampler in 22nm FD-SOI CMOS. An RF-impedance matched FE-butter drives the proposed track-and-hold circuit. For the first time, inductive peaking is utilized inside a track-and-hold to increase the bandwidth over 23% from initially 12.9 GHz to 15.9 GHz compared to an un-peaked sampler without consuming additional power. No time-interleaving is utilized, eliminating the need for calibration of gain/offset/sample-phase mismatches. The RF-sampler maintains a SFDR and SNR above 53 dB and 49.8 dB, respectively, across the entire Nyquist band. A high frequency SNR improvement of 1.5 dB is simulated. The proposed RF-sampler is insensitive to input common-mode as well as supply voltage variations. The simulated clock jitter is only 22fs, which does not degrade the high-frequency SNR. A total power consumption of only 58 mW is required from a 1.2 V and 0.9 V supply.