Design of K-band Compact Wideband Low Noise Amplifier

This paper presents a K-band compact wideband low noise amplifier (LNA) based on parallel resonator. The bandwidth of proposed LNA is extended by adding a resonator, and the effect of degeneration inductor on amplifier gain and bandwidth is reduced by parasitic equivalent source degeneration inductor. Implemented in 65-nm CMOS process, the proposed LNA shows a measured peak gain of 10.74 dB with its 3-dB bandwidth ranging from 16 to 23.4 GHz and minimum noise figure of 3.2 dB. The input 1-dB gain compression point is higher than -2.8 dBm in the entire gain bandwidth. The measured results are in good agreement with the simulation results, and the LNA occupies very compact chip area of only 0.2 mm
²
.