An X-band 3000W High-Power Limiter based on Silicon-based PIN Diodes

In this work, a semi-active limiter in the X-band is demonstrated. The Four-stage PIN diode circuit structure is utilized in this limiter, which the front-stage power limiting channel uses the silicon-based diodes with relatively thicker I layer to ensure the characteristics of high power capacitance, and the remaining power limiting channels consisted with PIN diodes with the thinner I layer to increase isolation. The experimental results show that the designed limiter can work in 8-9GHz, the insertion loss is less than 1.5 dB and the input VSWR is less than 1.5. Under the working condition of 2us pulse width and 0.1% duty cycle, the limiter can withstand 3000W input power and the flat leakage can be kept less than 16dBm. It indicates that the designed limiter have good performance in X-band.