An On-Chip High-selectivity Miniaturized Dual-band Millimeter-Wave Band-pass Filter in 0.13-μm Bi-CMOS Technology

In this paper, a succinct miniaturization technique for compact on-chip dual-W/D band filter is presented, which is based on hybrid coupling of electromagnetic principle. In order to reduce the size of the dual-band band pass filter (BPF), the quarter-wave length of folded type resonators have been employed, which have been taken full advantage of multilayer characteristics of Bi-CMOS technique. Moreover, the methods of cross coupling and hybrid coupling are introduced to realize dual-band and high selection characteristics of the millimeter-wave on-chip BPF. As practical validation, a dual-W/D band BPF is built in a 0.13-μm SiGe bipolar complementary metal-oxide-semiconductor (Bi)-CMOS technology, which operates at 94-/120-GHz with 13%/12.6% bandwidth, and the insert loss of the BPF are less than 2dB with the chip area 0.07mm
²
. To our best knowledge, this is the first time to implement a 94-/120-GHz dual-band BPF in Bi-CMOS technology with such small size.