Isolation layer embedded GeTe phase change film microwave switch

An indirectly heated GeTe microwave switch is designed in this work. The multiphysics simulation software COMSOL is used to optimize the switch structure, and the associated performance of the switch is simulated and analyzed. By embedding a high thermal conductivity isolation layer in a low thermal conductivity oxide trench, the energy loss during heat transfer is significantly reduced, thereby the power and time required for switching states are decreased. Simulation results show that the non-crystallization process of the switch is reduced by 106ns and the crystallization process is reduced by 861ns, at a certain voltage and temperature. Compared to the existing works, this microwave switch obtains an optimization by 18% and 38.7%, respectively.