A High Efficiency and broadband GaN PA

A high efficiency and broadband GaN Power Amplifier (PA) is designed here. Initially, the value of Z
L
, Z
S
are calculated using load-pull and source-pull to obtain the fundamental and second harmonic impedances for Class-AB operation. Then, based on method of harmonic control and step matching structure, the second harmonic suppression levels are maintained from -10.53 to -47.12 dBc. The simulation results indicate that within the frequency band of 2.2-3.8 GHz the output power (P
out
) and Gain are 41 ±1 dBm and 14 ±1 dB, respectively. Meanwhile, power added efficiency (PAE) is approximately 62.2% and the maximum drain efficiency (DE) reaches 66.4%. Comparing with other GaN PAs in the same frequency, its high efficiency and vast bandwidth are clear advantages.