Nonlinear Behavior Modeling of GaN HEMT Using Enhanced Poly-Harmonic Distortion Model

This paper presents the nonlinear behavior modeling of a 400um GaN HEMT device using enhanced poly-harmonic distortion(EPHD) model.Owing to the second harmonic control of the EPHD model extraction method,the power added efficiency of the behavior model can have an obvious increase which is vital to the High Power Added Efficiency Amplifier designing.The behavior model is extracted by measuring the 400um GaN HEMT on chip in the frequency range of 1.1GHz~1.5GHz with the MT2000 active time domain loadpull system and verified by loadpull simulation in ADS. It is shown that the simulation results of the model have good agreement with the measurment.The power added efficiency of the amplifier increases by approximately 8% compared to the loadpull result without second harmonic control.