Numerical and semi-analytical analysis of modulation layer properties in ITO modulators

classical (numerical and semi-analytical) and quantum models for the effective charge accumulation/depletion layer depth in a metal-dielectric-Indium Tin Oxide modulator are compared. Both are shown to give results of the order of 0.1 nm, justifying modeling the layer in optical simulations as a two-dimensional object, for which the predictions of both models are very similar.