WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect

The article proposes a dynamic compact model for a CMOS-compatible ferroelectric tunnel junction (FTJ) with different thicknesses of the Hf
0.
5
Zr
0.
5
O
2
tunneling barrier. The model is based on the Wentzel-Kramers-Brillouin (WKB) approach to the point-contact model and incorporates the Thomas-Fermi interfacial screening and electrostriction effect. The tunnel junctions of type: metal-ferroelectric-metal and metal-ferroelectric-semiconductor are simulated to study their device's current density and tunneling electroresistance. The model is extensively verified with experimental data, highlighting the impact of voltage-controlled interfacial screening, and electrostriction effect on the device performance as the uniqueness of this work.