The dv/dt Capability of RB-IGCT for Hybrid Line Commutated Converter

This paper investigates the dv/dt induced turn-on mechanism and the optimization solution in the reverse blocking integrated gate commutated thyristor (RB-IGCT) when its gate driver is not powered on. Firstly, we decipher the critical dv/dt induced turn-on process and analyze the effect of turn-on time on the dv/dt capability. Then, based on the systematic analysis, diode and resistor branches connected to the gate and cathode are proposed to enhance the dv/dt capability, and the resistance value is adjusted to compromise the dv/dt capability and trigger characteristics of the device. Finally, the impact of the applied time on the turn-on has been verified through experiments, and the optimization effect of different gate resistances on the dv/dt capability has also been confirmed. It is believed that this study will deepen the understanding of the dv/dt induced turn-on of the RB-IGCT both theoretically and practically.