A Novel Active Gate Drive for Switching Loss Reduction of IGBT

As the core component of power converter, IGBT is widely used in electric vehicle, rail transit, aerospace and power system, etc. Reliable operation of IGBT is very important. According to statistics, fifty-five percent of power device failures are mainly caused by high temperature. For IGBT, the junction temperature is closely related to the loss. Therefore, this paper first analyzes the switching loss, and then proposes a new active gate driver (AGD). It is used to reduce the switching loss of IGBT so as to influence junction temperature. By judging the IGBT switching state. Using the current control voltage source (ccvs) and the magnitude of current in the feedback branch for feedback action. The gate voltage during IGBT turn-on process is increased. The gate voltage of the IGBT turn-off process is decreased It can shorten the switching time and reduce the switching loss. Turn-on feedback and turn-off feedback do not affect each other, and only affect the turn-on and turn-off process, and have no influence on other processes. The simulation results verify the correctness and feasibility of the theoretical analysis.