Neutron Induced Single Event Testing of Commercial Ferroelectric Memory Device (FRAM)

Results of neutron induced single event upset testing of the Infineon (Cypress) FM25CL64B-GA 64Kbit (8Kx8) Serial FRAM are described for 14-MeV and moderated 14-MeV environments. Five samples were irradiated with a 14-MeV neutron source. The units were tested after being irradiated statically as well as under bias using multiple combinations of continual read and write/read loops and using a variety of bit patterns. Results for single event functional interrupt (SEFI) and single event upset (SEU) errors are presented along with cross section data and soft error rates.