Noise Figure Measurement of 60 GHz Band Amplifiers at Cryogenic Temperatures

This paper presents the measurement results of noise figure of 60 GHz band amplifiers at cryogenic temperatures. The amplifiers are monolithic microwave integrated circuits with CMOS FETs and GaAs MESFETs operating 60 GHz band. The noise figure is measured by the cold-source method using the vector network analyzer, when the amplifiers are cryogenically cooled by the cryostat. The noise figures of 60 GHz band CMOS and GaAs amplifiers can respectively reduce about 2.5 dB/100 K and 2 dB/ 100K until 150 K at 60 GHz. This paper concludes the usefulness of cryogenically cooled amplifier for 5G and 6G mobile communication systems.