Thermal Characterization of Packaged SiC Devices for High-Temperature Applications

Effective thermal management is vital for the high-temperature operation of silicon carbide (SiC) devices due to their limited thermal margins. The temperature also significantly affects the thermal properties of packaging materials, leading to variations in thermal conductivity and specific heat. Consequently, the overall thermal performance of the packaged semiconductor is influenced. As a result, achieving precise thermal analysis becomes essential to ensure consistent and reliable SiC device operation in high-temperature settings. This paper focuses on the thermal characterization of packaged SiC devices for such environments, utilizing comprehensive simulations. By addressing the challenges posed by restricted thermal headroom and the impact of temperature on packaging materials, the emphasis lies on achieving accurate thermal analysis. The paper introduces a simulation approach that combines the 3ω method and transient thermal analysis to precisely estimate the junction temperature in packaged SiC devices. Through these simulations, detailed temperature profiles are derived, considering both linear and nonlinear variations in parameters across different layers. This method provides invaluable insights for developing robust thermal management strategies, thereby ensuring the reliability and optimal performance of SiC devices in demanding high-temperature conditions.