2-Terminal, High Density, and Magnetic Field Free SOT-MRAM

The preponderance of artificial intelligence (AI) in modern society has enabled a wide range of transformative new applications in areas ranging from natural language processing to wearable health monitoring. Enhancing the performance of the memory subsystem is a key to improving the overall energy-efficiency of tomorrow’s computing systems. Here we discuss a two-terminal spin-orbit torque magnetoresistive random access memory (SOT-MRAM) device which leverages a combination of spin-orbit torque (SOT) and spin-transfer torque (STT), as well as unconventional spin-orbit torque to achieve ultrahigh speed, high density and energy efficiency.