Optimizing Absorber Layer in Photodetectors with CH3NH3SnI3 Organometal Halide Perovskite: A Simulation-Based Approach

The photodetector is an important component of optoelectronic systems with integrated circuits. Photon radiation is absorbed by photodetectors and transformed into electrical energy to determine optical power. Photodetectors can achieve remarkable results by efficiently employing semiconductor materials with a significant absorption coefficient and high charge carrier mobility. In spite of its remarkable photo-electronic qualities, like quick response and high sensitivity, organometal halide perovskites have attracted significant interest. The numerical simulation approach can help to analyse and optimize the device's performance. SCAPS-1D Simulator was used for all simulations in this investigation. Here we use
$\text{CH}_{3}\text{NH}_{3}\text{SnI}_{3}$
as organometal halide perovskite to enhance the device performance. Using numerical simulation techniques, different layers are employed to examine the operation of optoelectronic systems. Optimising the absorber layer's thickness, doping and defect density can improve the device performance. The current
$34.16 \text{mA}/\text{cm}^{2}$
is achieved at a thickness of 750nm, and at the same thickness the maximum value of external quantum efficiency is achieved. At this thickness with a biasing voltage of −0.1V highest value of responsivity and detectivity is attained at
$0.635 \text{AW}^{-1}$
and
$1.736\mathrm{x}10^{11}$
Jones numeric values, respectively. All these results are taken at incident light with wavelength 850nm, which shows the near-infrared region for detection. The simulated device gives a higher performance in the range of 800nm to
$1\mu \mathrm{m}$
, which shows the NIR region used for remote sensing.