Towards Ultrawide Band Semiconductors Usage in High-Voltage MOS Devices

The paper attempts to describe the path to achieve better high breakdown voltage (V
br
) in integration with the minimum power losses using ultrawide bandgap (UWB) semiconductors in MOS devices. The performance of semiconductors ranging from NBG silicon to UWB gallium oxide for the high voltage MOS device based applications is investigated. Among the listed semiconductors, the group III-V/VI compound semiconductors based MOS devices exhibits better switching behaviour. The UWB ß-Ga
2
O
3
shows superior high voltage performance with exception of its poor thermal conductivity (λ) which is ~0.2 times inferior to that of the Si. However, this can be improved by developing a good thermal conductive substrate and further suggests a path for the development of MOS devices using UWB gallium oxide semiconductors.