Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V

In this work, GaN power Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) have been fabricated using GaN-on-QST substrate with only SiON dielectric (Device A) and GaN-on-Si substrate with in-situ SiN/SiON dielectric (Device B). Device A shows a high breakdown voltage (BV) up to 2094 V and less than 30 % increase of dynamic R
on
up to 1650 V compared to Device B, suggesting that using GaN-on-QST substrate with only SiON dielectric are promising to achieve a highperformance GaN power MIS-HEMTs with a stable dynamic R
on
.