High-frequency All SiC Improved Quadratic Boost Converter

This paper presents the design, development and test of an Improved Quadratic Boost Converter topology using SiC power MOSFET and Schottky Diodes. Past research has shown its benefits in containing the duty-cycle value while achieving high-boost conversion ratios in the presence of largely intermittent inputs, but always focused on low-frequency Si-based solutions. A shortcoming of the IQBC is indeed the size of the magnetic components, which can be reduced by using wideband-gap semiconductors and higher switching frequencies.