A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application

Simulation of a 1700 V 4H-SiC VDMOSFET with self-aligned channel and split gate (SASG) architecture for high frequency switching performance is reported. An innovative process flow to fabricate the 1700 V SASG VDMOSFET is proposed at first time and the DC and AC characteristics of the proposed SASG VDMOSFET are compared with conventional VDMOSFET through TCAD (Technology Computer Aided Design) simulation. The gate charge, switching delay time and input capacitance have been improved 32%, 45% and 28% on the SASG VDMOSFET, respectively without sacrificing DC characteristics.