Analysis of IGBT Reliability Considering Bonding Line Fault

Insulated gate bipolar transistor (IGBT) is the core component of the widely used power converter. IGBT is the most fragile device in the converter, and the fault of bond wire will cause IGBT aging failure. In this paper, the influence of overload current applied on IGBT bonding wire and bonding wire shedding on the reliability of IGBT module is analyzed in ANSYS. The results show that when overload current is applied or bonding wire falls off, the overall temperature of the module will increase or even exceed the maximum allowable temperature, resulting in a decrease in the reliability level of IGBT, which will cause module failure in severe cases.