Two-Port Measurement of Packaging Parasitic Inductance in SiC Half-Bridge Power Modules Considering Mutual Inductance*

This paper proposed a two-port measurement method, which improves the accuracy of measured parasitic inductances for SiC MOSFET half-bridge modules by considering the mutual inductances. The method process has three steps to measure the impedance parameters (Z-parameters) by imitating the switching transient. Then, the model of the power module was simulated in ANSYS Q3D to extract the parasitic inductances including the mutual inductances. These parameters were imported to ADS to build the small signal model of the SiC MOSFET. The proposed method was applied to the simulation circuit, and the ADS results agree well with the Q3D results, showing a maximum error of 0.9%. The validation indicates that the proposed measurement method can extract parasitic inductance accurately through the simple three steps.