High Isolation RF MEMS Capacitive Shunt Switch for 5G Communication

This paper presents capacitive RF MEMS switch implemented on standard FBK process. High isolation of −33 dB and low insertion loss of −0.12 dB is achieved at the frequency band of 30 GHz. RF analysis is performed in CST microwave Studio whereas mechanical analysis is performed in Intellisuite. The design operates on low actuation voltage of 14.18 V to achieve desired displacement which makes it suitable for various application where power requirement is important. RF MEMS switches can be incorporated in various new generation application equipment where high linearity and wider bandwidth operation is required.