On-Chip Surge Protection Structure with High Surge Robustness for USB PD 3.1 Applications

An on-chip surge protection device for V
BUS
pins in the USB type-C interfaces is optimized to comply with USB Power Delivery (PD) 3.1 specification. Compared to the traditional PNP BJT, the new proposed PNP BJT with inserted base layout can reach higher surge and ESD robustness with relatively small area. The proposed devices fabricated in a 0.18-μm BCD technology have been measured by surge, HBM, and TLP tests to verify their immunity.