Dual-Frequency High-Power Rectifying Metasurface for Microwave Power Transfer

This paper presents a design for a dual-frequency high-power rectifying metasurface. It comprises a dual-frequency receiving metasurface and a rectifier. The metasurface utilizes an ELC structure and achieves nearly 90% power absorption at both 2.4GHz and 3.5GHz, while consuming minimal energy in the medium and on the surface. The rectifying circuit incorporates GaN HEMT transistors and is designed based on a power amplifier. At an input power of approximately 40dBm, the rectifier demonstrates a high rectification efficiency, reaching 70% at 2.4GHz and 60% at 3.5GHz.