Modeling of High Gain Tunneling Diode using Verilog-A for Backscatter Antenna

Based on the negative resistance characteristics of tunnel diode, a new low-power backscatter signal transmitter is designed to increase the reflected echo. By constructing the equivalent circuit of tunnel diode AI301A and adjusting different voltage values, we measured the reflection gain at each voltage. The experimental results show that the maximum reflection gain is 9.704dB at the voltage of 120mV and the frequency of 2.8 GHz.