A MCU-robust Interleaved Data/Detection SRAM for Space Environments

This work extends a new method to detect Multiple-Cell Upsets (MCU) in SRAM memories for space applications. The method involves spatially interleaving a memory plan with a network of memory radiation detectors. A 32kb interleaved data/detection SRAM was designed in the 28 nm FD-SOI Technology and tested using post-layout simulations. Results confirm the correct operation of the data and the detection cells of the memory, detecting single and multiple events inserted in different positions of the memory array. Considering the ratio between the number of data and detection cells used in this work (50%), the detection method can provide a probability of detecting MCUs in a memory plan that can reach close to 100%.