Silicon Carbide Slot Dielectric Resonator Antenna for High Temperature and Power Applications

Silicon carbide (SiC) has a higher breakdown field and larger band gap compared to silicon, making it an attractive material for devices operating at high power and high temperatures. In this paper, we present the design and simulation of a slot fed rectangular dielectric resonator antenna (DRA) on a silicon carbide (4H-SiC) substrate. The antenna operates between 27 GHz – 33 GHz with a return loss of at least 10 dB. The maximum realized gain at 30 GHz is 5.5 dBi with a total efficiency of 97%.