Study of Nanosheet Performance by Varying the Aspect Ratio

With FETs being scaled continuously, short channel effects can be experienced as a result. The main objective of this paper is to design and analyze the nanosheet GAA FET with equal aspect ratio of width to height and propose a nanosheet devices with reduced width and height by incorporating three nanowires with underlap. Each device is stimulated and its performance is observed. This paper investigates the effect of short channel effects on the performance of nanosheet GAA FETs, with a focus on minimizing SCEs. Short channel effects are observed in these devices and note that some parameters are enhanced. The short channel effects such as subthreshold slope and DIBL is the factors that increase the device’s short channel performance as a result of the observed improvements. In nanosheet GAA FETs, the ON-state current is getting more. In order to achieve a large ON-state current, designing nanowire devices with underlaps on either side of the channel is one of the techniques. Three nanowires are employed to design the nanosheet GAA FET, which consists of bulk and underlapped source/drain regions. The characteristics of all the three devices are investigated and it is seen that the ON-state current is reduced due to decrease of carriers flow from source to drain through the channel in proposed devices and also reduce the OFF-state current which provides the improved short channel performance in proposed devices. By reducing the channel height, the device is proved the better ON current and reducing of device width provides the enhanced short channel performances of nanosheet.