Design And Implementation Of Common Source Amplifier Circuit Using Gate All Around Junctionless Dopingless Nanowire TFET

The practical utilization of analog common source amplifier circuit, implemented using Gate All Around Junction Less Dopingless Nanowire Tunnel Field Effect Transistor (GAA JL DL NW TFET) device is proposed herein. The integration of Tunnelling, GAA architectures, dopingless and Junction-Less technique in the proposed Nanowire TFET structure led to exceptional electrostatic control over the channel. That is due to the enhanced individual properties of each technique which has resulted in the refinement of the transfer characteristics of the conventional MOSFET, HD TMG TFET Structure which were analyzed and compared with GAA JL DL NW TFET using analog parametric analysis, improvements such as, a reduced $\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}}$ of $4.79 \times 10^{-16}$ (A), an improved $\mathrm{I}_{\mathrm{O}\mathrm{N}}$ of 1.17 $(\mu \mathrm{A})$, and an enhanced $\mathrm{I}_{\mathrm{O}\mathrm{N}}/\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}}$ of $2.44 \times 10^{15}$. Look up table approach has been used to study CS amplifier circuit application using proposed device, it was determined that the proposed design achieved higher gain of 10.23 dB for the same configuration of the CS Amplifier circuit and draws lower current while delivering the same voltage gain as the existing design.