Apodized Chirped Bragg Gratings in a Silicon Nitride-on-Insulator Platform at Short-Wave Infrared Wavelengths

Apodized chirped Bragg gratings (ACGs) can provide high reflectivity and controlled dispersion in mode-locked lasers on a silicon chip [1–4]. While electron-beam lithography enables patterning Bragg gratings in silicon with high resolution [5–7], manufacturing ACGs using CMOS-compatible processes remains a challenge. Recently, CMOS-compatible ACGs in silicon nitride have been reported at telecom wavelengths [8], [9]. Here, we report the design, fabrication, and characterization of silicon nitride ACGs operating in the short-wave infrared band.