Insights Into a New Geometric Graphene Diode with Ultrahigh Asymmetry Ratio: A Computational Approach

In this study, we introduce a novel concept of the transport properties of three proposed geometric graphene diodes based on self-consistent charge density functional tight-binding method. The calculations have been performed with bias voltages up to a few volts suitable for electronics applications. Geometrical graphene devices based ballistic region exhibited strong nonlinear I(V) characteristic curves as well as desirable current amounts. The results indicated that the graphene Device C with an edge width 5nm and angle of 47° showed an excellent current value of 213 µA at 1.5V, which was higher than other two devices A and B with edge widths 9 nm and 5nm and corresponding angle 61°. A maximum AR of 2.23 has been achieved at a current of 137 µA for Device C, which is among the highest values for a geometric graphene device reported to date. This study provides a pathway for optimizing the graphene diodes to be used as potential applications for energy harvesting devices.