Numerical Simulations of Silicon Nitride Etching in V-NAND Structures

This work proposes the modeling for predicting the etching process of silicon nitride films in phosphoric acid. The model is established based on the Eley-Rideal surface reaction mechanism and validated by the comparisons against experimental data. The results indicate successful agreements between the computational data and the experimental measurements in the etching amount and Si(OH)
4
concentration during the etching of Si
3
N
4
using H
3
PO
4
solution.