An Electromechanical Compact Model for Radio Frequency Flexible Graphene Field-Effect Transistor

Modeling of radio frequency (RF) flexible electronic device is still a challenge due to lack of accurate model. In this paper, a compact model for RF flexible graphene field effect transistor (FGFET) is presented. The model is established by introducing first-principle calculation and tight-binding approach to calculate quantum capacitance and channel charge. After that, the model is established by drift-diffusion equation based on density of states (DOS) calculation and the nonlinear capacitance is deduced. Based on the compact model of quantum capacitance, and nonlinear capacitance, the extrinsic cutoff frequency
$(f_{\mathrm{T}})$
and extrinsic maximum oscillation frequency
$(f_{\max})$
are simulated. The results are validated by scattering (S) parameters measured up to 40 GHz. Moreover, within a maximum uniaxial strain of 2%, the simulated data show good agreement with the measured data of
$f_{\mathrm{r}}$
and
$f_{\max}$
. The results of this paper will pave the way for RF applications of flexible electronics.