High Performance CVD Grown Nanolayered PtSe2/SOI Heterostructure for Broadband Photodetection

Transition metal dichalcogenides based on the Group-10 transition metals are emerging as a subset of layered 2D materials which offer tunable semimetallic to semiconductor properties and exceptionally high charge carrier mobilities. Here we report PtSe
2
/SOI heterojunction photodetectors based on direct growth of PtSe
2
on a silicon-on-insulator (SOI) substrate through a low-temperature chemical vapor deposition (CVD) technique. The heterojunction device exhibits high responsivity of 918 A/W at 785 nm light wavelength and a fast photo-response of 110/98 µs. The device also has broadband detection capability from 340 nm to 1350 nm beyond the absorption cut-off of Si owing to the strong near-infrared (NIR) absorption by PtSe
2
. The feasibility of large-scale selenization of Pt into PtSe
2
by CVD process and the low-temperature growth technique makes it a promising candidate for developing future IR photodetectors.