Magnetic Switching Properties for Synthetic Antiferromagntic Layers with Perpendicular Easy Magnetic Anisotropy

The magnetic properties and switching behavior have been investigated for synthetic antiferromagnetic (SyAF) layers with perpendicular to the film plane easy magnetic anisotropy. We investigated the magnetic properties of SyAF layers using LLG micro-magnetic simulation, and found that square shape hysteresis in low magnetic field was observed for samples with anisotropic field of 1 x 10
⁶
and 1 x 10
⁷
erg/cc and coupling strength of 0.15 μerg/cm. We also investigated the magnetic switching properties for SyAF (CoFeB 1.2 nm/Ru 0.3 nm/CoFeB 0.6nm) films by using anomaly Hall effect, and found the switching current density of the sample was smaller than that of CoFeB 1.2 nm single ferromagnetic film by spin orbit torque with a W under layer.