Improved high permeability CoZrTaB laminated thin films with novel CMOS compatible dielectric material

This paper present an optimized CoZrTaB-based laminated thin films with a novel wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material exhibiting a narrow and clean undercut. Good uniaxial anisotropy with low coercivity was achieved via in-situ magnetic alignment during magnetron sputtering. Permeability of 432 and Q-factor of 23.4 at 100 MHz were observed in high frequency permeameter measurement. Finally thermal annealing was carried out at various temperatures. Uniaxial anisotropy was maintained up to 300 °C, while an enhancement of permeability (by 25%) was observed.